LOW-POWER PERFORMANCE OF 0.5-MU-M JFET FOR LOW-COST MMICS IN PERSONAL COMMUNICATIONS

The low-power microwave performance of an enhancement-mode ion-implanted GaAs JFET is reported in this work. The 0.5-mum x 100-mum E-JFET with a threshold voltage of V(th) = 0.3 V achieved a maximum dc transconductance of g(m) = 489 mS/mm at V(ds) = 1.5 V and I(ds) = 18 mA. Operating at 0.5 mW of power with V(ds) = 0.5 V and I(ds) = 1 mA, the best device on a 3-inch wafer achieved a noise figure of 0.8 dB with an associated gain of 9.6 dB measured at 4 GHz. Across a 3-inch wafer the average noise figure was F(min) = 1.2 dB and the average associated gain was G(a) = 9.8 dB for 15 devices measured. These results demonstrate that the E-JFET is an excellent choice for low-power personal communication applications.