LOCATION OF 1/F NOISE SOURCES IN BJTS .2. EXPERIMENT

被引：25

作者：

PAWLIKIEWICZ, AH ^{[1
]}

VANDERZIEL, A ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 09期

关键词：

D O I：

10.1109/T-ED.1987.23188

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2009 / 2012

页数：4

共 12 条

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[3]

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[8] LOCATION OF 1/F NOISE SOURCES IN BJTS AND HBJTS .1. THEORY [J].

VANDERZIEL, A ;

ZHANG, X ;

PAWLIKIEWICZ, AH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) :1371-1376

[9] A THEORY OF THE HOOGE PARAMETERS OF SOLID-STATE DEVICES [J].

VANDERZIEL, A ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :667-671

[10] PROPOSED DISCRIMINATION BETWEEN 1/F NOISE SOURCE IN TRANSISTORS [J].

VANDERZIEL, A .

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