SYNTHESIS AND STRUCTURAL CONFIGURATION OF HIGHLY STRAINED INAS FILMS IN GAAS

We present a study of the fundamental growth processes during the formation of InAs/GaAs heterointerfaces. The important factors dictating the buildup of the interfaces are identified, and strategies to optimize the interface morphology are developed. The microscopic structural configuration of the interfaces is examined with atomic resolution by means of double-crystal X-ray diffractometry and transmission electron microscopy. These experiments demonstrate that InAs/GaAs heterostructures with an exceptional crystalline perfection can be obtained by exploiting the unique capability of molecular beam epitaxy in controlling both thermodynamics and kinetics of crystal growth. Finally, we outline the promising implications for the creation of novel electronic materials offered by this level of growth control.