Indium-tin oxide (ITO) films were grown by the flash evaporation method without oxygen gas flow during deposition. The minimum electrical resistivity and the maximum average optical transmittance were found at the optimized substrate temperature of about 673 K. Further improvements in the electrical conductivity and the optical transmittance of ITO films were made by post-deposition annealing under different conditions of humidity. The effects of post-deposition annealing in the presence of the different conditions of humidity on the electrical as well as the optical properties of ITO films were studied. The values of the intrinsic bandgap and effective mass were calculated. The implications are discussed.