EFFECT OF ANNEALING ON ELECTRICAL AND OPTICAL-PROPERTIES OF RF MAGNETRON-SPUTTERED INDIUM TIN OXIDE-FILMS

被引:92
作者
WU, WF [1 ]
CHIOU, BS [1 ]
机构
[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 300,TAIWAN
关键词
D O I
10.1016/0169-4332(93)90233-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Indium tin oxide (ITO, 90wt%In2O3-10wt%SnO2) films of approximately mum thick have been deposited on glass substrates by radio-frequency (RF) magnetron sputtering. The effect of post-deposition heat treatment on the electrical and optical properties of ITO films are investigated. Annealing of ITO-coated substrates at a temperature of 350-550-degrees-C for 2 h in air causes the ITO layers to crystallize and grains to grow. Tin atoms are activated after annealing and behave as effective donors. The electrical resistivity of ITO film decreases by more than two orders of the magnitude after annealing. The infrared reflectance increases as the annealing temperature is raised. An infrared reflectance of approximately 60% (at 5 mum) is obtained for the 550-degrees-C-annealed sample. Several material parameters, such as the effective band gap and the refractive index, have been derived and discussed.
引用
收藏
页码:497 / 504
页数:8
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