PHOTOREFLECTANCE MEASUREMENTS OF UNINTENTIONAL IMPURITY CONCENTRATIONS IN UNDOPED GAAS

被引:28
作者
SYDOR, M
ANGELO, J
MITCHEL, W
HAAS, TW
YEN, MY
机构
[1] USAF,WRIGHT AERONAUT LABS,MAT LAB,WRIGHT PATTERSON AFB,OH 45433
[2] SYSTRAN CORP,DAYTON,OH 45432
关键词
D O I
10.1063/1.343896
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:156 / 160
页数:5
相关论文
共 11 条
[1]   THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].
ASPNES, DE .
SURFACE SCIENCE, 1973, 37 (01) :418-442
[2]   SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].
ASPNNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652
[3]   MODULATION SPECTROSCOPY AS A TOOL FOR ELECTRONIC MATERIAL CHARACTERIZATION [J].
BOTTKA, N ;
GASKILL, DK ;
SILLMON, RS ;
HENRY, R ;
GLOSSER, R .
JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (02) :161-170
[4]  
BOTTKA N, IN PRESS J CRYST GRO
[5]   PHOTOREFLECTANCE CHARACTERIZATION OF INTERBAND-TRANSITIONS IN GAAS/ALGAAS MULTIPLE QUANTUM WELLS AND MODULATION-DOPED HETEROJUNCTIONS [J].
GLEMBOCKI, OJ ;
SHANABROOK, BV ;
BOTTKA, N ;
BEARD, WT ;
COMAS, J .
APPLIED PHYSICS LETTERS, 1985, 46 (10) :970-972
[6]   NONCONTACT DOPING LEVEL DETERMINATION IN GAAS USING PHOTOREFLECTANCE SPECTROSCOPY [J].
PETERS, L ;
PHANEUF, L ;
KAPITAN, LW .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4558-4562
[7]   VARIATIONS IN THE CARRIER CONCENTRATION IN ELEMENTAL AND COMPOUND SEMICONDUCTORS UTILIZING ELECTROLYTE ELECTROREFLECTANCE - TOPOGRAPHICAL INVESTIGATION [J].
POLLAK, FH ;
OKEKE, CE ;
VANIER, PE ;
RACCAH, PM .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5375-5380
[8]   PHOTOREFLECTANCE LINE SHAPE AT FUNDAMENTAL EDGE IN ULTRAPURE GAAS [J].
SHAY, JL .
PHYSICAL REVIEW B, 1970, 2 (04) :803-&
[9]  
SPICER WE, 1988, J ELECTRON MATER, V17, P420
[10]   EXCITONIC TRANSITIONS IN GAAS/GAXAL1-XAS QUANTUM WELLS OBSERVED BY PHOTOREFLECTANCE SPECTROSCOPY - COMPARISON WITH A 1ST-PRINCIPLES THEORY [J].
THEIS, WM ;
SANDERS, GD ;
LEAK, CE ;
BAJAJ, KK ;
MORKOC, H .
PHYSICAL REVIEW B, 1988, 37 (06) :3042-3051