AN IMPROVED EMPIRICAL FIT TO BARAFF UNIVERSAL CURVES FOR THE IONIZATION COEFFICIENTS OF ELECTRON AND HOLE MULTIPLICATION IN SEMICONDUCTORS

被引：10

作者：

SUTHERLAND, AD

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 07期

关键词：

D O I：

10.1109/T-ED.1980.20025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1299 / 1300

页数：2

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