PREPARATION OF PEROVSKITE ORIENTED PBZRXTI1-XO3 FILMS WITH SUPPRESSED VAPOR-PHASE REACTIONS BY A DIGITAL CHEMICAL-VAPOR-DEPOSITION METHOD

We show that vapor phase reactions of precursors during the deposition of PbTiO3 and PbZrxTi1-xO3 (PZT) films contribute to the film formation, and that the vapor phase reactions are reduced in the digital chemical vapor deposition (CVD) method. From the results of experimental deposition of PbOx, ZrOx, and TiOx films using three oxidant gas introduction modes, we can infer that the vapor phase generation of PbOx, ZrOx, and TiOx makes a large contribution to the formation of these films when the precursors and oxidant gas are mixed in the vapor phase. On the other hand, in our digital CVD method alternating oxidant gas supply mode, the PbOx, ZrOx and TiOx films were formed predominantly through surface reactions and reducing vapor phase reactions. We also successfully applied the digital CVD method to the deposition of oriented PbZrxTi1-xO3 film on a MgO(100) substrate at the susceptor temperature 530 degrees C. It should be possible to extend this technique to atomic laver epitaxy (ALE) of PbZrxTi1-xO3 films.