NH3 AS A PHOTOSENSITIZER IN THE EPITAXIAL-GROWTH OF GE ON GAAS BY LASER PHOTOCHEMICAL VAPOR-DEPOSITION

被引：14

作者：

KIELY, CJ

TAVITIAN, V

JONES, C

EDEN, JG

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 01期

关键词：

D O I：

10.1063/1.101755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：65 / 67

页数：3

相关论文

共 29 条

[1] BOYD IW, 1987, LASER PROCESSING THI, P185
[2] LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF SIO2
BOYER, PK
ROCHE, GA
RITCHIE, WH
COLLINS, GJ
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 716 - 719
[3] EFFECT OF SURFACE IRRADIATION, SUBSTRATE-TEMPERATURE, AND ANNEALING ON LASER DEPOSITED SILICON DIOXIDE
BOYER, PK
EMERY, KA
ZARNANI, H
COLLINS, GJ
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (09) : 979 - 981
[4] BOYER PK, 1983, MATER RES SOC S P, V17, P119
[5] DEUTSCH TF, 1983, MATER RES SOC S P, V17, P129
[6] ARF-LASER PHOTO-DISSOCIATION OF NH3 AT 193-NM - INTERNAL ENERGY-DISTRIBUTIONS IN NH2X2B1 AND A2A1, AND 2-PHOTON GENERATION OF NH-A3-PI AND B1-SIGMA+
DONNELLY, VM
BARONAVSKI, AP
MCDONALD, JR
[J]. CHEMICAL PHYSICS, 1979, 43 (02) : 271 - 281
[7] PHOTOCHEMICAL VAPOR-DEPOSITION OF UNDOPED AND N-TYPE AMORPHOUS-SILICON FILMS PRODUCED FROM DISILANE
INOUE, T
KONAGAI, M
TAKAHASHI, K
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (08) : 774 - 776
[8] PHOTO-METAL ORGANIC VAPOR-PHASE EPITAXY - A LOW-TEMPERATURE METHOD FOR THE GROWTH OF CDXHG1-XTE
IRVINE, SJC
GIESS, J
MULLIN, JB
BLACKMORE, GW
DOSSER, OD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1450 - 1455
[9] PHOTO-STIMULATED II-VI CRYSTAL-GROWTH - A STUDY OF LOW-TEMPERATURE EPITAXY
IRVINE, SJC
MULLIN, JB
HILL, H
BROWN, GT
BARNETT, SJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 188 - 197
[10] PHOTOSENSITIZATION - A STIMULANT FOR THE LOW-TEMPERATURE GROWTH OF EPITAXIAL HGTE
IRVINE, SJC
MULLIN, JB
TUNNICLIFFE, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 188 - 193