EFFECT OF SURFACE IRRADIATION, SUBSTRATE-TEMPERATURE, AND ANNEALING ON LASER DEPOSITED SILICON DIOXIDE

被引：15

作者：

BOYER, PK

EMERY, KA

ZARNANI, H

COLLINS, GJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 09期

关键词：

D O I：

10.1063/1.95471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：979 / 981

页数：3

共 6 条

[1] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON DIOXIDE [J].

ADAMS, AC ;

ALEXANDER, FB ;

CAPIO, CD ;

SMITH, TE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1545-1551

[2] LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF SIO2 [J].

BOYER, PK ;

ROCHE, GA ;

RITCHIE, WH ;

COLLINS, GJ .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :716-719

[3]

BOYER PK, 1982, JUN P MAT RES SOC BO

[4] MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE [J].

DUN, H ;

PAN, P ;

WHITE, FR ;

DOUSE, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1555-1563

[5] HYDROGEN IN SEMI-INSULATING POLYCRYSTALLINE SILICON FILMS [J].

KNOLLE, WR ;

MAXWELL, HR ;

BENENSON, RE .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4385-4390

[6] COMPARISON OF PROPERTIES OF DIELECTRIC FILMS DEPOSITED BY VARIOUS METHODS [J].

PLISKIN, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05) :1064-1081

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