LOW-TEMPERATURE REACTIVE ION ETCHING AND MICROWAVE PLASMA-ETCHING OF SILICON - REPLY

被引：3

作者：

TACHI, S

TSUJIMOTO, K

OKUDAIRA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 17期

关键词：

D O I：

10.1063/1.99793

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1666 / 1667

页数：2

共 14 条

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