HIGH-BRIGHTNESS GREEN LIGHT-EMITTING-DIODES

被引：12

作者：

EASON, DB ^{[1
]}

HUGHES, WC ^{[1
]}

REN, J ^{[1
]}

RIEGNER, M ^{[1
]}

YU, Z ^{[1
]}

COOK, JW ^{[1
]}

SCHETZINA, JF ^{[1
]}

CANTWELL, G ^{[1
]}

HARSCH, WC ^{[1
]}

机构：

[1] EAGLE PICHER LAB,MIAMI,OK 74354

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 14期

关键词：

LIGHT-EMITTING DIODES; II-VI SEMICONDUCTORS;

D O I：

10.1049/el:19940766

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

II-VI heterostructures composed of ZnSe/ZnTeSe layers have been employed to develop high-brightness green, light-emitting diodes operating at peak wavelengths in the pure green spectral region (508-514nm). The brightest devices produce 792muW (10 mA, 4V) peaked at 510nm. This corresponds to an external efficiency of 2% and a luminous performance of 8.0 lumen/W.

引用

页码：1178 / 1180

页数：3

共 7 条

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