COMPARISON OF SIIII-SIV AND SIIII-VIII DIFFUSION-MODELS IN III-V-HETEROSTRUCTURES LATTICE MATCHED TO GAAS

被引：9

作者：

DEPPE, DG

PLANO, WE

BAKER, JE

HOLONYAK, N

LUDOWISE, MJ

KUO, CP

FLETCHER, RM

OSENTOWSKI, TD

CRAFORD, MG

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] HEWLETT PACKARD OPTOELECTR DIV,SAN JOSE,CA 95131

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 22期

关键词：

D O I：

10.1063/1.100284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2211 / 2213

页数：3

共 25 条

[21] DESTRUCTION MECHANISM OF III-V COMPOUND QUANTUM-WELL STRUCTURES DUE TO IMPURITY DIFFUSION [J].

TAN, TY ;

GOSELE, U .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1841-1845

[22] MECHANISMS OF DOPING-ENHANCED SUPERLATTICE DISORDERING AND OF GALLIUM SELF-DIFFUSION IN GAAS [J].

TAN, TY ;

GOSELE, U .

APPLIED PHYSICS LETTERS, 1988, 52 (15) :1240-1242

[23] INTERMIXING OF AN ALAS-GAAS SUPER-LATTICE BY ZN DIFFUSION [J].

VANVECHTEN, JA .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :7082-7084

[24] APPLICATION OF THIN SILICON FILMS TO CLOSED-TUBE SI AND ZN DIFFUSION IN GAAS AND ALXGA1-XAS [J].

VAWTER, GA ;

OMURA, E ;

WU, XS ;

MERZ, JL ;

COLDREN, L ;

HU, E .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) :5541-5547

[25] THE EFFECT OF ARSENIC PRESSURE ON IMPURITY DIFFUSION IN GALLIUM ARSENIDE [J].

VIELAND, LJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 21 (3-4) :318-320

← 1 2 3 →