PHASE-TRANSFORMATIONS INDUCED BY RAPID THERMAL ANNEALING IN TI-SI AND W-SI ALLOYS

被引:3
作者
NAVA, F
DAMICO, A
BEARZOTTI, A
机构
[1] IESS,CNR,I-00156 ROME,ITALY
[2] UNIV ROME 2,DIPARTIMENTO INGN ELETTRON,TOR VERGATA,ITALY
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 05期
关键词
D O I
10.1116/1.576310
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:3023 / 3029
页数:7
相关论文
共 31 条
[1]   THE METASTABLE C49 STRUCTURE IN SPUTTERED TISI2 THIN-FILMS [J].
BRETSCHNEIDER, W ;
BEDDIES, G ;
SCHOLZ, R .
THIN SOLID FILMS, 1988, 158 (02) :255-263
[2]  
BROADBENT EK, IN PRESS THIN SOLID
[3]   REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J].
CHOW, TP ;
STECKL, AJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1480-1497
[4]  
Cotter P.G., 1956, J AM CERAM SOC, V39, P11
[5]   1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].
CROWDER, BL ;
ZIRINSKY, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :369-371
[6]  
DHEURLE FM, 1980, J APPL PHYS, V51, P5976, DOI 10.1063/1.327517
[7]   THERMAL-ANALYSIS OF NONISOTHERMAL CRYSTALLIZATION KINETICS IN GLASS FORMING LIQUIDS [J].
HENDERSON, DW .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 30 (03) :301-315
[8]   RAPID ANNEALING OF TITANIUM SILICIDE USING A GRAPHITE STRIP HEATER [J].
JONES, RE ;
LI, BZ ;
DANESHVAR, K ;
DAVIS, J .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (12) :3465-3470
[9]   ELECTRONIC TRANSPORT-PROPERTIES OF REFRACTORY-METAL DISILICIDES [J].
MALHOTRA, V ;
MARTIN, TL ;
HUANG, MT ;
MAHAN, JE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :271-272
[10]   RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES [J].
MURARKA, SP ;
READ, MH ;
DOHERTY, CJ ;
FRASER, DB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) :293-301