AN X-RAY PHOTOEMISSION SPECTROSCOPY INVESTIGATION OF OXIDES GROWN ON AUXSI1-X LAYERS

被引：52

作者：

CROS, A

SAOUDI, R

HOLLINGER, G

HEWETT, CA

LAU, SS

机构：

[1] ECOLE CENT LYON, F-69130 ECULLY, FRANCE

[2] UNIV CALIF SAN DIEGO, DEPT ELECT & COMP ENGN, LA JOLLA, CA 92093 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 04期

关键词：

D O I：

10.1063/1.345610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray photoemission spectroscopy was used to analyze the oxide grown at low temperature on AuxSi1-x films. It was found that the oxide is stoichiometric SiO2, but is structurally distinct from oxides grown on Si at high temperatures (950°C). Also, unoxidized Au-Si atom inclusions were observed in the oxide. The composition of the inclusions is dependent on the initial bulk AuxSi1-x composition.

引用

页码：1826 / 1830

页数：5

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