TEMPERATURE AND FLOW EFFECTS IN ALUMINUM ETCHING USING BROMINE-CONTAINING PLASMAS

被引：13

作者：

KEATON, AL

HESS, DW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.584055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：72 / 76

页数：5

共 23 条

[1]

BELL HB, 1986, OCT EL SOC EXT ABSTR

[2] TEMPERATURE-MEASUREMENTS OF GLASS SUBSTRATES DURING PLASMA-ETCHING [J].

BOND, RA ;

DZIOBA, S ;

NAGUIB, HM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :335-338

[3]

BRUCE RH, 1981, SOLID STATE TECHNOL, V24, P64

[4] HIGH-RATE ANISOTROPIC ALUMINUM ETCHING [J].

BRUCE, RH ;

MALAFSKY, GP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) :1369-1373

[5] REACTION OF ATOMIC AND MOLECULAR CHLORINE WITH ALUMINUM [J].

DANNER, DA ;

HESS, DW .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) :940-947

[6] THE EFFECT OF TEMPERATURE AND FLOW-RATE ON ALUMINUM ETCH RATES IN RF PLASMAS [J].

DANNER, DA ;

HESS, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (01) :151-155

[7]

DANNER DA, 1984, THESIS U CALIFORNIA

[8]

EGERTON EJ, 1982, SOLID STATE TECHNOL, V24, P84

[9] TRUE SURFACE-TEMPERATURE OF A SILICON WAFER AND THE RELATED ETCH RATE IN A CF4 PLASMA [J].

EISELE, KM .

REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12) :701-703

[10] THERMOCHEMISTRY OF BORON TRI-IODIDE AND HYPOBORIC ACID [J].

FINCH, A ;

GARDNER, PJ ;

HYAMS, IJ .

TRANSACTIONS OF THE FARADAY SOCIETY, 1965, 61 (508P) :649-&

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