QUENCHING AND RECOVERY CHARACTERISTICS OF THE EL2 DEFECT IN GAAS UNDER MONOCHROMATIC-LIGHT ILLUMINATION

被引：25

作者：

MANASREH, MO ^{[1
]}

FISCHER, DW ^{[1
]}

机构：

[1] USAF,WRIGHT RES & DEV CTR,MAT LAB,MLPO,WRIGHT PATTERSON AFB,OH 45433

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.40.11756

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：11756 / 11763

页数：8

共 83 条

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[8] NEED FOR AN ACCEPTOR LEVEL IN THE ASGA-ASI MODEL FOR EL2
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