CRYSTALLINITY OF GAN FILM GROWN BY ECR PLASMA-EXCITED MOVPE

被引：8

作者：

SATO, H

SASAKI, T

MATSUOKA, T

KATSUI, A

机构：

[1] NTT Opto-Electronics Laboratories, Tokai, Ibaraki-ken

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1990年 / 29卷 / 09期

关键词：

Carbon incorporation; Crystallinity change; ECR plasma-excited MOVPE; Gan; Mass spectrum; TMGa;

D O I：

10.1143/JJAP.29.1654

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the ECR plasma-excited MOVPE of GaN film, a strong correlation was found between carbon incorporation into the film and the crystallinity change from single crystal to polycrystal. Mass spectroscopic analysis showed that undissociated TMGa in the ECR plasma played an important role in the crystallinity change mechanism. © 1990 The Japan Society of Applied Physics.

引用

页码：1654 / 1655

页数：2

共 6 条

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[5] SUBSTRATE-TEMPERATURE DEPENDENCE OF CARBON INCORPORATION INTO GAAS GROWN BY MBE USING TRIETHYLGALLIUM AND AS4
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (05): : L738 - L740
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