SUBSTRATE-TEMPERATURE DEPENDENCE OF CARBON INCORPORATION INTO GAAS GROWN BY MBE USING TRIETHYLGALLIUM AND AS4

被引：7

作者：

SAITO, J

ONO, K

KONDO, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 05期

关键词：

D O I：

10.1143/JJAP.28.L738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L738 / L740

页数：3

共 10 条

[1] CHEMICAL BEAM EPITAXIAL-GROWTH OF HIGH-PURITY GAAS USING TRIETHYLGALLIUM AND ARSINE
CHIU, TH
TSANG, WT
SCHUBERT, EF
AGYEKUM, E
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1109 - 1111
[2] FARROW RFC, 1982, 2ND INT S MOL BEAM E, P169
[3] SIMPLE EMPIRICAL RELATIONSHIP BETWEEN MOBILITY AND CARRIER CONCENTRATION
HILSUM, C
[J]. ELECTRONICS LETTERS, 1974, 10 (13) : 259 - 260
[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIETHYLGALLIUM AND ARSINE
HORIGUCHI, S
KIMURA, K
KAMON, K
MASHITA, M
SHIMAZU, M
MIHARA, M
ISHII, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12): : L979 - L982
[5] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIETHYLGALLIUM AND AS4
KIMURA, K
HORIGUCHI, S
KAMON, K
MASHITA, M
MIHARA, M
ISHII, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (03): : 419 - 422
[6] 2-STAGE ARSENIC CRACKING SOURCE WITH INTEGRAL GETTER PUMP FOR MBE GROWTH
KRUSOR, BS
BACHRACH, RZ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 138 - 141
[7] A COMPARATIVE-STUDY OF GA(CH3)3 AND GA(C2H5)3 IN THE MOMBE OF GAAS
PUTZ, N
HEINECKE, H
HEYEN, M
BALK, P
WEYERS, M
LUTH, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 74 (02) : 292 - 300
[8] HIGHLY UNIFORM, HIGH-PURITY GAAS EPITAXIAL LAYER GROWN BY MBE USING TRIETHYLGALLIUM AND ARSENIC
SAITO, J
ONO, K
NANBU, K
ISHIKAWA, T
KONDO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (06): : L1144 - L1147
[9] THERMODYNAMIC ANALYSIS OF MOLECULAR-BEAM EPITAXY OF III-V-SEMICONDUCTORS
SEKI, H
KOUKITU, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 78 (02) : 342 - 352
[10] METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAAS USING TRIMETHYL-GALLIUM AND TRIETHYL-GALLIUM SOURCES
TOKUMITSU, E
KUDOU, Y
KONAGAI, M
TAKAHASHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (09): : 1189 - 1192

← 1 →