HIGHLY UNIFORM, HIGH-PURITY GAAS EPITAXIAL LAYER GROWN BY MBE USING TRIETHYLGALLIUM AND ARSENIC

被引：7

作者：

SAITO, J ^{[1
]}

ONO, K ^{[1
]}

NANBU, K ^{[1
]}

ISHIKAWA, T ^{[1
]}

KONDO, K ^{[1
]}

机构：

[1] FUJITSU LABS LTD, ATSUGI 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 06期

关键词：

D O I：

10.1143/JJAP.27.L1144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1144 / L1147

页数：4

共 12 条

[1] CHEMICAL BEAM EPITAXIAL-GROWTH OF HIGH-PURITY GAAS USING TRIETHYLGALLIUM AND ARSINE
CHIU, TH
TSANG, WT
SCHUBERT, EF
AGYEKUM, E
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1109 - 1111
[2] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIETHYLGALLIUM AND ARSINE
HORIGUCHI, S
KIMURA, K
KAMON, K
MASHITA, M
SHIMAZU, M
MIHARA, M
ISHII, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12): : L979 - L982
[3] LOW-PRESSURE OMVPE OF GAAS USING TRIETHYLGALLIUM
KIMURA, K
TAKAGISHI, S
HORIGUCHI, S
KAMON, K
MIHARA, M
ISHII, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09): : 1393 - 1396
[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIETHYLGALLIUM AND AS4
KIMURA, K
HORIGUCHI, S
KAMON, K
MASHITA, M
MIHARA, M
ISHII, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (03): : 419 - 422
[5] REDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES
KUECH, TF
POTEMSKI, R
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 821 - 823
[6] CLASSIFICATION OF SURFACE-DEFECTS ON GAAS GROWN BY MOLECULAR-BEAM EPITAXY
NANBU, K
SAITO, J
ISHIKAWA, T
KONDO, K
SHIBATOMI, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : 601 - 604
[7] PARKER EHC, 1985, TECHNOLOGY PHYSICS M
[8] A COMPARATIVE-STUDY OF GA(CH3)3 AND GA(C2H5)3 IN THE MOMBE OF GAAS
PUTZ, N
HEINECKE, H
HEYEN, M
BALK, P
WEYERS, M
LUTH, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 74 (02) : 292 - 300
[9] RESIDUAL SHALLOW ACCEPTORS IN GAAS-LAYERS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
ROTH, AP
CHARBONNEAU, S
GOODCHILD, RG
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5350 - 5357
[10] SAITO J, 1985, FUJITSU SCI TECH J, V21, P190

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