2 SELECTIVE ETCHING SOLUTIONS FOR GAAS ON INGAAS AND GAAS/ALGAAS ON INGAAS

被引：15

作者：

HILL, DG

LEAR, KL

HARRIS, JS

机构：

[1] Stanford Electronics Laboratories, Stanford

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 09期

关键词：

D O I：

10.1149/1.2087098

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Two solutions for selectively etching GaAs on InGaAs and GaAs/AIGaAs on InGaAs are presented. A solution of H2O2/NH4OH is shown to have a GaAs etch rate more than 50 times higher than the etch rate of Ino.1Gao.9As. A solution of K3Fe(CN)6/K4Fe(CN)6 etches both GaAs and Al0.3Ga0.7As selectively relative to InGaAs, with a selectivity of 8 or more for Ino.12Gao.88 As. copyright. © 1990, The Electrochemical Society, Inc. All rights reserved.

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页码：2912 / 2914

页数：3

相关论文

共 17 条

[1] HIGH-POWER PHASE-LOCKED INGAAS STRAINED-LAYER QUANTUM WELL HETEROSTRUCTURE PERIODIC LASER ARRAY [J].

BAILLARGEON, JN ;

YORK, PK ;

ZMUDZINSKI, CA ;

FERNANDEZ, GE ;

BEERNINK, KJ ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1988, 53 (06) :457-459

[2] CONTINUOUS, HIGH-POWER OPERATION OF A STRAINED INGAAS/ALGAAS QUANTUM WELL LASER [J].

BOUR, DP ;

GILBERT, DB ;

ELBAUM, L ;

HARVEY, MG .

APPLIED PHYSICS LETTERS, 1988, 53 (24) :2371-2373

[3] USE OF THIN ALGAAS AND INGAAS STOP-ETCH LAYERS FOR REACTIVE ION ETCH PROCESSING OF III-V-COMPOUND SEMICONDUCTOR-DEVICES [J].

COOPER, CB ;

SALIMIAN, S ;

MACMILLAN, HF .

APPLIED PHYSICS LETTERS, 1987, 51 (26) :2225-2226

[4] HETEROJUNCTION BIPOLAR-TRANSISTOR USING PSEUDOMORPHIC GAINAS FOR THE BASE [J].

ENQUIST, PM ;

RAMBERG, LR ;

NAJJAR, FE ;

SCHAFF, WJ ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1986, 49 (03) :179-180

[5] ALGAAS/GAINAS STRAINED-BASE PNP HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HILL, DG ;

LEE, WS ;

MA, T ;

HARRIS, JS .

ELECTRONICS LETTERS, 1989, 25 (15) :993-995

[6]

HILL DG, UNPUB IEEE ELECTRON

[7]

IANELLI JM, 1988, APPL PHYS LETT, V54, P301

[8] GAAS/IN0.08GA0.92AS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A LATTICE-MISMATCHED BASE [J].

ITO, H ;

ISHIBASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (05) :L421-L424

[9] A STUDY OF GAAS ETCHING IN ALKALINE H2O2 SOLUTIONS [J].

KELLY, JJ ;

REYNDERS, AC .

APPLIED SURFACE SCIENCE, 1987, 29 (02) :149-164

[10] AN IMPROVED TECHNIQUE FOR SELECTIVE ETCHING OF GAAS AND GA1-XALXAS [J].

LEPORE, JJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6441-6442