A STUDY OF GAAS ETCHING IN ALKALINE H2O2 SOLUTIONS

被引：37

作者：

KELLY, JJ ^{[1
]}

REYNDERS, AC ^{[1
]}

机构：

[1] PHILIPS RES LABS, 5600 JA EINDHOVEN, NETHERLANDS

来源：

APPLIED SURFACE SCIENCE | 1987年 / 29卷 / 02期

关键词：

D O I：

10.1016/0169-4332(87)90001-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：149 / 164

页数：16

相关论文

共 24 条

[1] BOCKRIS JO, 1972, ELECTROCHEMICAL SCI, pCH4
[2] EVALUATION OF A NEW POLISH FOR GALLIUM ARSENIDE USING A PEROXIDE-ALKALINE SOLUTION
DYMENT, JC
ROZGONYI, GA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) : 1346 - &
[3] INVESTIGATION OF PHOTOELECTROCHEMICAL CORROSION OF SEMICONDUCTORS .1.
FRESE, KW
MADOU, MJ
MORRISON, SR
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1980, 84 (24) : 3172 - 3178
[4] CHEMICAL ETCHANT FOR SELECTIVE REMOVAL OF GAAS THROUGH SIO2 MASKS
GANNON, JJ
NUESE, CJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1215 - 1219
[5] CRYSTALLINE STRUCTURE AND SURFACE REACTIVITY
GATOS, HC
[J]. SCIENCE, 1962, 137 (3527) : 311 - &
[6] MECHANISMS OF DECOMPOSITION OF SEMICONDUCTORS BY ELECTROCHEMICAL OXIDATION AND REDUCTION
GERISCHE.H
MINDT, W
[J]. ELECTROCHIMICA ACTA, 1968, 13 (06) : 1329 - &
[7] ON THE MECHANISM OF HYDROGEN EVOLUTION AT GAAS ELECTRODES
GERISCHER, H
MULLER, N
HAAS, O
[J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1981, 119 (01): : 41 - 48
[8] ELECTROCHEMICAL AND PHOTOELECTROCHEMICAL BEHAVIOR AND SELECTIVE ETCHING OF III-V SEMICONDUCTORS IN H2O2 AS REDOX SYSTEM
HAROUTIOUNIAN, E
SANDINO, JP
CLECHET, P
LAMOUCHE, D
MARTIN, JR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (01) : 27 - 34
[9] KELLY JJ, 1986, DECHEMA MONOGR, V102, P453
[10] CORRELATION BETWEEN ETCH CHARACTERISTICS OF GAAS ETCH SOLUTIONS CONTAINING H2O2 AND SURFACE-FILM CHARACTERISTICS
KOHN, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 505 - 508