ANNEALING CHARACTERISTICS OF BE ION-IMPLANTED GAAS

被引：14

作者：

NOJIMA, S

KAWASAKI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 10期

关键词：

D O I：

10.1143/JJAP.17.1845

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1845 / 1850

页数：6

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[1] LUMINESCENCE PROPERTIES OF BE-IMPLANTED GAAS1-XPX (X APPROXIMATELY-EQUAL-TO 0.38)
CHATTERJEE, PK
MCLEVIGE, WV
STREETMAN, BG
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3003 - 3009
[2] ELECTRICAL-PROPERTIES OF BE-IMPLANTED GAAS1-XPX
CHATTERJEE, PK
MCLEVIGE, WV
STREETMAN, BG
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (11) : 961 - 964
[3] PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS
CHATTERJEE, PK
VAIDYANATHAN, KV
MCLEVIGE, WV
STREETMAN, BG
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 567 - 569
[4] REDUCED LATERAL DIFFUSION AND REVERSE LEAKAGE IN BE-IMPLANTED GAAS1-XPX DIODES
CHATTERJEE, PK
STREETMAN, BG
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (04) : 305 - &
[5] BERYLLIUM AND SULFUR ION-IMPLANTED PROFILES IN GAAS+
COMAS, J
PLEW, L
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (02) : 209 - 221
[6] LOW-DOSE N-TYPE ION-IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES
DONNELLY, JP
BOZLER, CO
LINDLEY, WT
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 273 - 276
[7] FUJIMOTO M, 1976, ION IMPLANTATION SEM, P89
[8] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS
HARRIS, JS
MAYER, JW
EISEN, FH
HASKELL, JD
WELCH, B
PASHLEY, RD
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 601 - &
[9] HELIX MJ, 1977, IEDM TECH DIG, P195
[10] ANNEAL BEHAVIOR OF DEFECTS IN ION-IMPLANTED GAAS DIODES
HUNSPERGER, RG
MARSH, OJ
[J]. METALLURGICAL TRANSACTIONS, 1970, 1 (03): : 603 - +