ANISOTROPIC ETCHING OF POLYCRYSTALLINE SILICON WITH A HOT CL2 MOLECULAR-BEAM

[1] PLANAR PLASMA-ETCHING OF POLYSILICON USING CCL4 AND NF3 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 795 - 799

[2] CARTER G, 1968, ION BOMBARDMENT SOLI, P214

[3] CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P322

[4] GLOW-DISCHARGE MASS-SPECTROMETRY - TECHNIQUE FOR DETERMINING ELEMENTAL COMPOSITION PROFILES IN SOLIDS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1779 - 1786

[5] PARAMETER DEPENDENCE OF RIE INDUCED RADIATION-DAMAGE IN SILICON DIOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) : 2415 - 2419

[6] FRIESER RG, 1983, J ELECTROCHEM SOC, V130, P2238

[7] HOT-JET ETCHING OF PB, GAAS, AND SI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 363 - 365

[8] HOT JET ETCHING OF GAAS AND SI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 315 - 317

[9] HERZBERG G, 1967, MOL SPECTRA MOL STRU, V1, P519

[10] HIRAOKA S, UNPUB

[1] PLANAR PLASMA-ETCHING OF POLYSILICON USING CCL4 AND NF3 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 795 - 799

[2] CARTER G, 1968, ION BOMBARDMENT SOLI, P214

[3] CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P322

[4] GLOW-DISCHARGE MASS-SPECTROMETRY - TECHNIQUE FOR DETERMINING ELEMENTAL COMPOSITION PROFILES IN SOLIDS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1779 - 1786

[5] PARAMETER DEPENDENCE OF RIE INDUCED RADIATION-DAMAGE IN SILICON DIOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (11) : 2415 - 2419

[6] FRIESER RG, 1983, J ELECTROCHEM SOC, V130, P2238

[7] HOT-JET ETCHING OF PB, GAAS, AND SI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 363 - 365

[8] HOT JET ETCHING OF GAAS AND SI [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 315 - 317

[9] HERZBERG G, 1967, MOL SPECTRA MOL STRU, V1, P519

[10] HIRAOKA S, UNPUB