THE EFFECTS OF ANNEALING ENCAPSULANT AND AMBIENT ON THE BARRIER HEIGHT OF WNX/GAAS CONTACT AND SELF-ALIGNED GATE FIELD-EFFECT TRANSISTOR FABRICATION

被引：9

作者：

CHEUNG, SK ^{[1
]}

KWOK, SP ^{[1
]}

KALETA, A ^{[1
]}

YU, KM ^{[1
]}

JAKLEVIC, JM ^{[1
]}

LIANG, CL ^{[1
]}

CHEUNG, NW ^{[1
]}

HALLER, EE ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,BERKELEY,CA 94720

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1779 / 1784

页数：6

共 15 条

[1] INVESTIGATION OF REACTIVELY SPUTTERED TUNGSTEN NITRIDE AS HIGH-TEMPERATURE STABLE SCHOTTKY CONTACTS TO GAAS
GEISSBERGER, AE
SADLER, RA
LEYENAAR, FA
BALZAN, ML
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (06): : 3091 - 3094
[2] HIGH-TEMPERATURE STABLE W/GAAS INTERFACE AND APPLICATION TO METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AND DIGITAL CIRCUITS
JOSEFOWICZ, JY
RENSCH, DB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1707 - 1715
[3] KOHN E, 1979, IEDM TECH DIG, P469
[4] HIGH-TEMPERATURE STABLE W-GAAS SCHOTTKY-BARRIER
MATSUMOTO, K
HASHIZUME, N
TANOUE, H
KANAYAMA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06): : L393 - L395
[5] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT
SINHA, AK
POATE, JM
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (12) : 666 - 668
[6] CHARACTERIZATION OF REACTIVELY SPUTTERED WNX FILM AS A GATE METAL FOR SELF-ALIGNMENT GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
UCHITOMI, N
NAGAOKA, M
SHIMADA, K
MIZOGUCHI, T
TOYODA, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06): : 1392 - 1397
[7] UCHITOMI N, 1984, 16TH C SOL STAT DEV, P383
[8] INTERFACE CHEMISTRY AND ELECTRICAL-PROPERTIES OF TUNGSTEN SCHOTTKY-BARRIER CONTACTS TO GAAS
WALDROP, JR
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 350 - 352
[9] NB/GAAS AND NBN/GAAS SCHOTTKY BARRIERS
WU, XW
ZHANG, LC
BRADLEY, P
CHIN, DK
VANDUZER, T
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (05) : 287 - 289
[10] CHARACTERISTICS OF WN/GAAS SCHOTTKY CONTACTS FORMED BY REACTIVE RF SPUTTERING
YAMAGISHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (12): : L895 - L898

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