共 16 条
HOMOGENEOUS DEGRADATION OF SURFACE EMITTING TYPE INGAASP/INP LIGHT-EMITTING DIODES
被引:6
作者:

FUKUDA, M
论文数: 0 引用数: 0
h-index: 0

FUJITA, O
论文数: 0 引用数: 0
h-index: 0

UEHARA, S
论文数: 0 引用数: 0
h-index: 0
机构:
关键词:
D O I:
10.1109/50.9249
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
引用
收藏
页码:1808 / 1814
页数:7
相关论文
共 16 条
- [1] DIRECT EVIDENCE FOR THE ROLE OF GOLD MIGRATION IN THE FORMATION OF DARK-SPOT DEFECTS IN 1.3-MU-M INP/INGAASP LIGHT-EMITTING-DIODES[J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 37 - 39CHIN, AK论文数: 0 引用数: 0 h-index: 0ZIPFEL, CL论文数: 0 引用数: 0 h-index: 0GEVA, M论文数: 0 引用数: 0 h-index: 0CAMLIBEL, I论文数: 0 引用数: 0 h-index: 0SKEATH, P论文数: 0 引用数: 0 h-index: 0CHIN, BH论文数: 0 引用数: 0 h-index: 0
- [2] CATHODOLUMINESCENCE EVALUATION OF DARK SPOT DEFECTS IN INP/INGAASP LIGHT-EMITTING-DIODES[J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 555 - 557CHIN, AK论文数: 0 引用数: 0 h-index: 0ZIPFEL, CL论文数: 0 引用数: 0 h-index: 0MAHAJAN, S论文数: 0 引用数: 0 h-index: 0ERMANIS, F论文数: 0 引用数: 0 h-index: 0DIGIUSEPPE, MA论文数: 0 引用数: 0 h-index: 0
- [3] THE MIGRATION OF GOLD FROM THE P-CONTACT AS A SOURCE OF DARK SPOT DEFECTS IN INP/INGAASP LEDS[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 304 - 310CHIN, AK论文数: 0 引用数: 0 h-index: 0ZIPFEL, CL论文数: 0 引用数: 0 h-index: 0ERMANIS, F论文数: 0 引用数: 0 h-index: 0MARCHUT, L论文数: 0 引用数: 0 h-index: 0CAMLIBEL, I论文数: 0 引用数: 0 h-index: 0DIGIUSEPPE, MA论文数: 0 引用数: 0 h-index: 0CHIN, BH论文数: 0 引用数: 0 h-index: 0
- [4] RAPID DEGRADATION OF INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS DUE TO 110 DARK LINE DEFECT FORMATION[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 921 - 923ENDO, K论文数: 0 引用数: 0 h-index: 0机构: NIPPON ELECT CO LTD,BASIC TECHNOL RES LABS,TAKATSUKU,KAWASAKI,JAPAN NIPPON ELECT CO LTD,BASIC TECHNOL RES LABS,TAKATSUKU,KAWASAKI,JAPANMATSUMOTO, S论文数: 0 引用数: 0 h-index: 0机构: NIPPON ELECT CO LTD,BASIC TECHNOL RES LABS,TAKATSUKU,KAWASAKI,JAPAN NIPPON ELECT CO LTD,BASIC TECHNOL RES LABS,TAKATSUKU,KAWASAKI,JAPANKAWANO, H论文数: 0 引用数: 0 h-index: 0机构: NIPPON ELECT CO LTD,BASIC TECHNOL RES LABS,TAKATSUKU,KAWASAKI,JAPAN NIPPON ELECT CO LTD,BASIC TECHNOL RES LABS,TAKATSUKU,KAWASAKI,JAPANSAKUMA, I论文数: 0 引用数: 0 h-index: 0机构: NIPPON ELECT CO LTD,BASIC TECHNOL RES LABS,TAKATSUKU,KAWASAKI,JAPAN NIPPON ELECT CO LTD,BASIC TECHNOL RES LABS,TAKATSUKU,KAWASAKI,JAPANKAMEJIMA, T论文数: 0 引用数: 0 h-index: 0机构: NIPPON ELECT CO LTD,BASIC TECHNOL RES LABS,TAKATSUKU,KAWASAKI,JAPAN NIPPON ELECT CO LTD,BASIC TECHNOL RES LABS,TAKATSUKU,KAWASAKI,JAPAN
- [5] DARK DEFECTS IN INGAASP INP DOUBLE HETEROSTRUCTURE LASERS UNDER ACCELERATED AGING[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1246 - 1250FUKUDA, M论文数: 0 引用数: 0 h-index: 0WAKITA, K论文数: 0 引用数: 0 h-index: 0IWANE, G论文数: 0 引用数: 0 h-index: 0
- [6] PHOTO-ELASTIC WAVEGUIDES AND THEIR EFFECT ON STRIPE-GEOMETRY GAAS-GA1-XALXAS LASERS[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4567 - 4579KIRKBY, PA论文数: 0 引用数: 0 h-index: 0机构: UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLANDSELWAY, PR论文数: 0 引用数: 0 h-index: 0机构: UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLANDWESTBROOK, LD论文数: 0 引用数: 0 h-index: 0机构: UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND
- [7] STRAIN-RELATED DEGRADATION PHENOMENA IN LONG-LIVED GAAIAS STRIPE LASERS[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4462 - 4466ROBERTSON, MJ论文数: 0 引用数: 0 h-index: 0机构: UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLANDWAKEFIELD, B论文数: 0 引用数: 0 h-index: 0机构: UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
- [8] RECENT ADVANCES IN THE PERFORMANCE AND RELIABILITY OF INGAASP LEDS FOR LIGHTWAVE COMMUNICATION-SYSTEMS[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 285 - 295SAUL, RH论文数: 0 引用数: 0 h-index: 0
- [9] DEGRADED INGAASP/INP DOUBLE HETEROSTRUCTURE LASER OBSERVATION WITH ELECTRON-PROBE MICROANALYZER[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 115 - 117SEKI, M论文数: 0 引用数: 0 h-index: 0FUKUDA, M论文数: 0 引用数: 0 h-index: 0WAKITA, K论文数: 0 引用数: 0 h-index: 0
- [10] INGAASP INP 1.3-MU-M WAVELENGTH SURFACE-EMITTING LEDS FOR HIGH-SPEED SHORT HAUL OPTICAL COMMUNICATION-SYSTEMS[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (06) : 1217 - 1222SUZUKI, A论文数: 0 引用数: 0 h-index: 0UJI, T论文数: 0 引用数: 0 h-index: 0INOMOTO, Y论文数: 0 引用数: 0 h-index: 0HAYASHI, J论文数: 0 引用数: 0 h-index: 0ISODA, Y论文数: 0 引用数: 0 h-index: 0NOMURA, H论文数: 0 引用数: 0 h-index: 0