HYDROGEN IN CRYSTALLINE SEMICONDUCTORS - A REVIEW OF EXPERIMENTAL RESULTS

被引：97

作者：

JOHNSON, NM

DOLAND, C

PONCE, F

WALKER, J

ANDERSON, G

机构：

[1] Xerox Palo Alto Research Center, Palo Alto

来源：

PHYSICA B | 1991年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(91)90104-M

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The range of phenomena associated with the introduction of hydrogen into single-crystal semiconductors is reviewed with emphasis on the following current topics: dissociation of hydrogen-dopant complexes, diatomic hydrogen complexes, and hydrogen-induced defects. Included is a tabulation of the parameters that have thus far been deduced from experimental studies on hydrogen-dopant complexes and hydrogen migration in crystalline silicon and gallium arsenide.

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页码：3 / 20

页数：18

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