EFFECT OF CONVENTIONAL AND RAPID THERMAL ANNEALING ON PLATINUM SILICIDE SCHOTTKY-BARRIER DIODES

被引：12

作者：

DIMITRIADIS, CA

机构：

[1] Department of Physics, Solid State Section, University of Thessaloniki

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 02期

关键词：

D O I：

10.1063/1.103055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of rapid thermal annealing (RTA) on the material properties and on the performance of Pt Schottky barriers on Si are investigated and compared with the effects of corresponding furnace annealings. For fabrication of platinum silicide-silicon Schottky diodes, furnace annealing degrades the minority-carrier diffusion length, while Schottky diodes prepared by RTA have better performance without degradation of the diffusion length.

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页码：143 / 145

页数：3

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