OBSERVATION OF TRANSIENT-BEHAVIOR OF GAAS MBE GROWTH BY RHEED OSCILLATION

被引：10

作者：

SUGIURA, H

KAWASHIMA, M

HORIKOSHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1986年 / 25卷 / 12期

关键词：

D O I：

10.1143/JJAP.25.1847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1847 / 1850

页数：4

共 11 条

[1] SURFACE STOICHIOMETRY AND MORPHOLOGY OF MBE GROWN (001)GAAS THROUGH THE ANALYSIS OF RHEED OSCILLATIONS [J].

BRIONES, F ;

GOLMAYO, D ;

GONZALEZ, L ;

DEMIGUEL, JL .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L478-L480

[2] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY [J].

GHAISAS, SV ;

MADHUKAR, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :540-546

[3] DIFFRACTION FROM STEPPED SURFACES .1. REVERSIBLE SURFACES [J].

LENT, CS ;

COHEN, PI .

SURFACE SCIENCE, 1984, 139 (01) :121-154

[4] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY BEHAVIOR DURING HOMOEPITAXIAL MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND IMPLICATIONS FOR GROWTH-KINETICS AND MECHANISMS [J].

LEWIS, BF ;

GRUNTHANER, FJ ;

MADHUKAR, A ;

LEE, TC ;

FERNANDEZ, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05) :1317-1322

[5] SELF-MASKING SELECTIVE EPITAXY BY MOLECULAR-BEAM METHOD [J].

NAGATA, S ;

TANAKA, T .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :940-942

[6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J].

NEAVE, JH ;

DOBSON, PJ ;

JOYCE, BA ;

ZHANG, J .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :100-102

[7] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].

NEAVE, JH ;

JOYCE, BA ;

DOBSON, PJ ;

NORTON, N .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8

[8] ONE ATOMIC LAYER HETEROINTERFACE FLUCTUATIONS IN GAAS-ALAS QUANTUM WELL STRUCTURES AND THEIR SUPPRESSION BY INSERTION OF SMOOTHING PERIOD IN MOLECULAR-BEAM EPITAXY [J].

SAKAKI, H ;

TANAKA, M ;

YOSHINO, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L417-L420

[9] MONO-LAYER AND BI-LAYER SUPERLATTICES OF GAAS AND ALAS [J].

SANO, N ;

KATO, H ;

NAKAYAMA, M ;

CHIKA, S ;

TERAUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L640-L641

[10] SIMULTANEOUS OBSERVATION OF RHEED OSCILLATION DURING GAAS MBE GROWTH WITH MODULATED ELECTRON-BEAM [J].

SUGIURA, H ;

KAWASHIMA, M ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1986, 25 (06) :847-851

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