IONIZATION COEFFICIENTS IN GA0.96AL0.04SB

被引：10

作者：

LUQUET, H

PEROTIN, M

GOUSKOV, L

LLINARES, C

ARCHIDI, H

LAHBABI, M

KARIM, M

MBOW, B

机构：

[1] Centre d'Electronique de Montpellier, Associé au CNRS (UA 391), Université des Sciences et Techniques du Languedoc, 34095 Montpellier Cedex 5, Place Eugène Bataillon

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 08期

关键词：

D O I：

10.1063/1.346272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ionization coefficients of holes and electrons (kp and k n) in Ga0.96Al0.04Sb have been derived from the variations of the photocurrent multiplication as a function of the reverse bias in Be-implanted p+Ga0.96Al0.04Sb/n Ga 0.96Al0.04Sb/n+ GaSb mesa diodes. Three wavelength values have been used for the illumination in order to obtain pure hole injection, nearly pure electron injection, and mixed injection. The k p and kn values thus determined for electric fields varying from 18 to 32 V/μm exhibit a high ratio value showing the interest of this material for avalanche photodiodes devices.

引用

页码：3861 / 3864

页数：4

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