DISPLACEMENT OF ARSENIC ATOMS IN SILICON CRYSTAL DURING IRRADIATION

[1] CHOW S, 1970, APPL PHYS LETTERS, V17, P23

[2] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[3] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +

[4] OBSERVATIONS OF ARSENIC ATOMS IN SILICON CRYSTALS BY USE OF HELIUM ION SCATTERING [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 5 (03): : 737 - &

[5] EFFECTS OF CRYSTAL SURFACE AND IMPERFECTIONS ON CHANNELING PHENOMENA OF PROTONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 5 (03): : 725 - &

[6] KOMAKI K, 1971, PHYS LETTERS NETH A, V34, P271

[7] BEAM EFFECTS IN ANALYSIS OF AS-DOPED SILICON BY CHANNELING MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1972, 20 (07) : 237 - &

[1] CHOW S, 1970, APPL PHYS LETTERS, V17, P23

[2] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &

[3] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 842 - +

[4] OBSERVATIONS OF ARSENIC ATOMS IN SILICON CRYSTALS BY USE OF HELIUM ION SCATTERING [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 5 (03): : 737 - &

[5] EFFECTS OF CRYSTAL SURFACE AND IMPERFECTIONS ON CHANNELING PHENOMENA OF PROTONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 5 (03): : 725 - &

[6] KOMAKI K, 1971, PHYS LETTERS NETH A, V34, P271

[7] BEAM EFFECTS IN ANALYSIS OF AS-DOPED SILICON BY CHANNELING MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1972, 20 (07) : 237 - &