GROWTH OF CDS/ZNS SUPERLATTICES AT LOW-TEMPERATURE BY ATOMIC LAYER EPITAXY

The (CdS)n/(ZnS)m superlattices (SLs) have been prepared on (100)GaAs at low growth temperature of 185 or 190°C by atomic layer epitaxy using a molecular beam epitaxy system. The SL growth progresses with the surface reconstruction change from c(2 × 2)-Zn to (2 × 1)-S for ZnS and from (1 × 1)-Cd or c(2 × 2)-Cd to (2 × 1)-S for CdS. The SL structures are confirmed by the satellite peaks observed in X-ray diffraction spectra. The SLs exhibit flat and smooth surfaces. The photoluminescence spectrum of the ((CdS)8/(ZnS)20)55 SL shows a sharp peak at 440 nm and suggests that the light emission originated from the quantum level in the SL. © 1990.