DIGITAL ETCHING USING KRF EXCIMER-LASER - APPROACH TO ATOMIC-ORDER-CONTROLLED ETCHING BY PHOTO INDUCED REACTION

被引：35

作者：

ISHII, M ^{[1
]}

MEGURO, T ^{[1
]}

GAMO, K ^{[1
]}

SUGANO, T ^{[1
]}

AOYAGI, Y ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 12B期

关键词：

DIGITAL ETCHING; SELF-LIMITING; ATOMIC-ORDER CONTROLLABILITY; PHOTOTHERMAL; ADIABATIC EXPANSION; GAAS; CHLORINE; DRY ETCHING;

D O I：

10.1143/JJAP.32.6178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cl2-based digital etching of GaAs has been studied using a 248 nm KrF excimer laser, which allowed a self-limited etching reaction. A threshold fluence for etching of 13 mJ/cm2 Was found, above which the etch rate abruptly increases and finally saturates at around 0.2 nm/cycle from 20 to 33 mJ/cm2. The self-limiting etching characteristics can be explained assuming the etching reaction to be limited by the amount of adsorbed Cl2. The etched depth is proportional to the number of digital etching cycles, and atomic-order-controlled etching is achieved.

引用

页码：6178 / 6181

页数：4

共 9 条

[1] MOLECULAR LAYER ETCHING OF GAAS [J].