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LOW-RESISTANCE NONALLOYED OHMIC CONTACTS ON P-TYPE GAAS USING GASB/GAAS STRAINED-LAYER SUPERLATTICES
被引:10
作者
:
CHYI, JI
论文数:
0
引用数:
0
h-index:
0
CHYI, JI
CHEN, J
论文数:
0
引用数:
0
h-index:
0
CHEN, J
KUMAR, NS
论文数:
0
引用数:
0
h-index:
0
KUMAR, NS
KIELY, C
论文数:
0
引用数:
0
h-index:
0
KIELY, C
PENG, CK
论文数:
0
引用数:
0
h-index:
0
PENG, CK
ROCKETT, A
论文数:
0
引用数:
0
h-index:
0
ROCKETT, A
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
MORKOC, H
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1989年
/ 55卷
/ 06期
关键词
:
D O I
:
10.1063/1.101835
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:570 / 571
页数:2
相关论文
共 6 条
[1]
MODELS FOR CONTACTS TO PLANAR DEVICES
BERGER, HH
论文数:
0
引用数:
0
h-index:
0
BERGER, HH
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(02)
: 145
-
&
[2]
Chang L. L., 1982, IBM Technical Disclosure Bulletin, V24, P4065
[3]
METAL-SEMICONDUCTOR SURFACE BARRIERS
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(11-1)
: 1023
-
&
[4]
EXTREMELY LOW RESISTANCE NONALLOYED OHMIC CONTACTS ON GAAS USING INAS/INGAAS AND INAS/GAAS STRAINED-LAYER SUPERLATTICES
PENG, CK
论文数:
0
引用数:
0
h-index:
0
PENG, CK
JI, G
论文数:
0
引用数:
0
h-index:
0
JI, G
KUMAR, NS
论文数:
0
引用数:
0
h-index:
0
KUMAR, NS
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
MORKOC, H
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(10)
: 900
-
901
[5]
EXTREMELY LOW NONALLOYED AND ALLOYED CONTACT RESISTANCE USING AN INAS CAP LAYER ON INGAAS BY MOLECULAR-BEAM EPITAXY
PENG, CK
论文数:
0
引用数:
0
h-index:
0
PENG, CK
CHEN, J
论文数:
0
引用数:
0
h-index:
0
CHEN, J
CHYI, J
论文数:
0
引用数:
0
h-index:
0
CHYI, J
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
MORKOC, H
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
64
(01)
: 429
-
431
[6]
AN (AL,GA)AS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH NONALLOYED GRADED-GAP OHMIC CONTACTS TO THE BASE AND EMITTER
RAO, MA
论文数:
0
引用数:
0
h-index:
0
RAO, MA
CAINE, EJ
论文数:
0
引用数:
0
h-index:
0
CAINE, EJ
LONG, SI
论文数:
0
引用数:
0
h-index:
0
LONG, SI
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
[J].
IEEE ELECTRON DEVICE LETTERS,
1987,
8
(01)
: 30
-
32
←
1
→
共 6 条
[1]
MODELS FOR CONTACTS TO PLANAR DEVICES
BERGER, HH
论文数:
0
引用数:
0
h-index:
0
BERGER, HH
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(02)
: 145
-
&
[2]
Chang L. L., 1982, IBM Technical Disclosure Bulletin, V24, P4065
[3]
METAL-SEMICONDUCTOR SURFACE BARRIERS
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(11-1)
: 1023
-
&
[4]
EXTREMELY LOW RESISTANCE NONALLOYED OHMIC CONTACTS ON GAAS USING INAS/INGAAS AND INAS/GAAS STRAINED-LAYER SUPERLATTICES
PENG, CK
论文数:
0
引用数:
0
h-index:
0
PENG, CK
JI, G
论文数:
0
引用数:
0
h-index:
0
JI, G
KUMAR, NS
论文数:
0
引用数:
0
h-index:
0
KUMAR, NS
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
MORKOC, H
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(10)
: 900
-
901
[5]
EXTREMELY LOW NONALLOYED AND ALLOYED CONTACT RESISTANCE USING AN INAS CAP LAYER ON INGAAS BY MOLECULAR-BEAM EPITAXY
PENG, CK
论文数:
0
引用数:
0
h-index:
0
PENG, CK
CHEN, J
论文数:
0
引用数:
0
h-index:
0
CHEN, J
CHYI, J
论文数:
0
引用数:
0
h-index:
0
CHYI, J
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
MORKOC, H
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
64
(01)
: 429
-
431
[6]
AN (AL,GA)AS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH NONALLOYED GRADED-GAP OHMIC CONTACTS TO THE BASE AND EMITTER
RAO, MA
论文数:
0
引用数:
0
h-index:
0
RAO, MA
CAINE, EJ
论文数:
0
引用数:
0
h-index:
0
CAINE, EJ
LONG, SI
论文数:
0
引用数:
0
h-index:
0
LONG, SI
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
[J].
IEEE ELECTRON DEVICE LETTERS,
1987,
8
(01)
: 30
-
32
←
1
→