INGAASP MULTIPLE QUANTUM WELL LASERS WITH PLANAR BURIED HETEROSTRUCTURE PREPARED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：5

作者：

ISHIGURO, H

KAWABATA, T

KOIKE, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 25期

关键词：

D O I：

10.1063/1.99547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2099 / 2101

页数：3

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共 11 条

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[8] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR COUPLED MULTIPLE QUANTUM-WELL IN1-XGAXP1-ZASZ-INP HETEROSTRUCTURE LASER-DIODES [J].

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[10] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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