CHARACTERIZATION OF HF-TREATED SI(111) SURFACES

被引:20
作者
KONISHI, T
UESUGI, K
TAKAOKA, K
KAWANO, S
YOSHIMURA, M
YAO, T
机构
[1] Department of Electrical Engineering, Hiroshima University, HigashiHiroshima
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 07期
关键词
SI(111); PHOTOLUMINESCENCE; FTIR; STM; HF TREATMENT; BUFFERED HF SOLUTION; H-TERMINATION; OXIDATION PROCESS;
D O I
10.1143/JJAP.32.3131
中图分类号
O59 [应用物理学];
学科分类号
摘要
The properties of Si(111) surfaces treated in various HF solutions are characterized by photoluminescence (PL), scanning tunneling microscopy (STM) and Fourier-transform infrared spectroscopy (FTIR). STM images show that the surfaces dipped in normal HF solution are terminated by Si-H, Si-H-2 and Si-H-3 bonds with high step density, while those treated by pH-modified buffered HF are atomically flat with wide terraces terminated mostly by Si-H bonds. Multistage oxidation processes via surface defects, atomic steps, kinks or terraces are suggested by a change in the PL intensity of HF-treated Si surfaces with exposure to oxygen. The PL measurement also shows that the surface treated with pH-modified buffered HF or boiled deionized water shows much better stability against oxidation than conventional HF-treated Si surfaces, which is consistent with the surface structure observed by means of STM.
引用
收藏
页码:3131 / 3134
页数:4
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