LASER-ASSISTED CHEMICAL ETCHING OF COPPER

被引：24

作者：

RITSKO, JJ

HO, F

HURST, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 01期

关键词：

D O I：

10.1063/1.100128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：78 / 80

页数：3

共 16 条

[1] DIRECT ETCHING OF POLYMERIC MATERIALS USING A XECL LASER [J].

ANDREW, JE ;

DYER, PE ;

FORSTER, D ;

KEY, PH .

APPLIED PHYSICS LETTERS, 1983, 43 (08) :717-719

[2] OPTICAL PROPERTIES OF SILVER AND CUPROUS HALIDES [J].

CARDONA, M .

PHYSICAL REVIEW, 1963, 129 (01) :69-+

[3] TOPICAL CARCINOGENESIS BY N-METHYL-N-NITROSOUREA IN SYRIAN-HAMSTER CHEEK-POUCH AND ORAL-MUCOSA [J].

CHAU, KK ;

EDWARDS, MB .

ARCHIVES OF ORAL BIOLOGY, 1984, 29 (03) :185-190

[4] LASER-ENHANCED GAS-SURFACE CHEMISTRY - BASIC PROCESSES AND APPLICATIONS [J].

CHUANG, TJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03) :798-806

[5] LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J].

EHRLICH, DJ ;

OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1018-1020

[6] NON-THERMAL EFFECTS IN LASER-ENHANCED ETCHING OF SILICON BY XEF2 [J].

HOULE, FA .

CHEMICAL PHYSICS LETTERS, 1983, 95 (01) :5-8

[7]

HOULE FA, 1987, MATER RES SOC S P, V29, P203

[8] XECL LASER CONTROLLED CHEMICAL ETCHING OF ALUMINUM IN CHLORINE GAS [J].

KOREN, G ;

HO, F ;

RITSKO, JJ .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 40 (01) :13-23

[9] EXCIMER LASER ETCHING OF AL METAL-FILMS IN CHLORINE ENVIRONMENTS [J].

KOREN, G ;

HO, F ;

RITSKO, JJ .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :1006-1008

[10] THERMODYNAMICS OF VAPORIZATION OF COPPER(I) HALIDES [J].

KRABBES, G ;

OPPERMANN, H .

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1977, 435 (NOV) :33-44

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