GA-GAAS-GAP SYSTEM - PHASE CHEMISTRY AND SOLUTION GROWTH OF GAASXP1-X

被引：19

作者：

PANISH, MB

机构：

[1] Bell Telephone Laboratories, Incorporated, Murray Hill

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1969年 / 30卷 / 05期

关键词：

D O I：

10.1016/0022-3697(69)90364-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Liquidus isotherms at 900°, 1000°, 1100°, 1200° and 1300°C have been determined for the GaAsχP1-χ primary phase field of the GaGaAsGaP ternary system. The corresponding solidus isotherms were determined at 900°, 1100°, 1200° and 1300°C and crystallization paths for the solid and liquid estimated. The ternary phase diagram was used to establish the conditions for liquid epitaxial growth of GaAsχP1-χ layers on GaP and for the growth of crystallites of predictable composition. No solid-solid miscibility gap was observed in the temperature range studied. © 1969.

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页码：1083 / &

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