CHARACTERISTICS OF METAL-TUNNEL-OXIDE-N-P+ SILICON SWITCHING DEVICES .1. EFFECTS OF DEVICE GEOMETRY AND FABRICATION PROCESSES

被引：12

作者：

DUNCAN, KA ^{[1
]}

TONNER, PD ^{[1
]}

SIMMONS, JG ^{[1
]}

FARAONE, L ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 10期

关键词：

D O I：

10.1016/0038-1101(81)90115-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：941 / &

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