GRADED OR STEPPED ENERGY BAND-GAP-INSULATOR MIS STRUCTURES (GI-MIS OR SI-MIS)

被引：16

作者：

DIMARIA, DJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 09期

关键词：

D O I：

10.1063/1.326728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5826 / 5829

页数：4

相关论文

共 20 条

[11] ELECTRICALLY ALTERABLE AVALANCHE-INJECTION-TYPE MOS READ-ONLY MEMORY WITH STACKED-GATE STRUCTURE
IIZUKA, H
MASUOKA, F
SATO, T
ISHIKAWA, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 379 - 387
[12] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN
IRENE, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) : 1613 - 1616
[13] JOYCE RJ, 1967, THIN SOLID FILMS, V1, P481
[14] INTERFACIAL DOPANTS FOR DUAL-DIELECTRIC, CHARGE-STORAGE CELLS
KAHNG, D
SUNDBURG, WJ
BOULIN, DM
LIGENZA, JR
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (09): : 1723 - 1739
[15] DSA-TYPE NONVOLATILE MEMORY TRANSISTOR WITH SELF-ALIGNED GATES
KIKUCHI, M
OHYA, S
YAMAGISHI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 49 - 54
[16] REACTIVE PLASMA DEPOSITED SI-N FILMS FOR MOS-LSI PASSIVATION
SINHA, AK
LEVINSTEIN, HJ
SMITH, TE
QUINTANA, G
HASZKO, SE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) : 601 - 608
[17] SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9
[18] DIFFERENTIAL STUDIES OF DUAL-DIELECTRIC CHARGE-STORAGE CELLS
THORNBER, KK
KAHNG, D
BOULIN, DM
NEPPELL, CT
SUNDBURG, WJ
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4047 - 4063
[19] ELECTRON-ELECTRON EFFECTS IN WRITING AND ERASING OF DUAL-DIELECTRIC CHARGE-STORAGE CELLS
THORNBER, KK
KAHNG, D
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 131 - 133
[20] ELECTRON-TRAPPING CHARACTERISTICS OF W IN SIO2
YOUNG, DR
DIMARIA, DJ
BOJARCZUK, NA
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3425 - 3427