THE PREPARATION OF MODULATION-DOPED GAAS/GAAS1-XPX STRAINED-LAYER SUPERLATTICES BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

被引：1

作者：

BIEFELD, RM

FRITZ, IJ

DOYLE, BL

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 05期

关键词：

D O I：

10.1007/BF02657908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：335 / 340

页数：6

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[7] MODULATION-DOPED GAAS/(AL,GA)AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS - MODFETS
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