INFLUENCE OF PROCESS PARAMETERS ON THE TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF RAPID THERMALLY NITRIDED AND REOXIDIZED NITRIDED THIN SIO2

被引：10

作者：

JOSHI, AB ^{[1
]}

KWONG, DL ^{[1
]}

LEE, S ^{[1
]}

机构：

[1] NCR CORP,DIV MICROELECTR,COLORADO SPRINGS,CO 80916

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 12期

关键词：

D O I：

10.1063/1.107280

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the impact of rapid thermal nitridation (RTN) and subsequent reoxidation (RTO) on the time-dependent dielectric breakdown of thin-gate oxides. The effect of RTN and RTO conditions on intrinsic and defect-related dielectric breakdown is investigated. These breakdown characteristics are correlated with compositional changes in the oxide during RTN and RTO. An optimal RTN/RTO gate oxide with higher charge-to-breakdown and lower defect density than pure SiO2 is reported.

引用

页码：1489 / 1491

页数：3

共 18 条

[1] EFFECT OF SYNCHROTRON X-RAY-RADIATION ON THE CHANNEL HOT-CARRIER RELIABILITY OF REOXIDIZED NITRIDED SILICON DIOXIDE [J].