VERIFICATION OF ANALYTIC POINT-DEFECT MODELS USING SUPREM-IV

被引:51
作者
LAW, ME
DUTTON, RW
机构
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D O I
10.1109/43.3148
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
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页码:181 / 190
页数:10
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共 18 条
[1]  
AHN ST, 1986, OCT FALL EL SOC M SA
[2]   TRANSIENT SIMULATION OF SILICON DEVICES AND CIRCUITS [J].
BANK, RE ;
COUGHRAN, WM ;
FICHTNER, W ;
GROSSE, EH ;
ROSE, DJ ;
SMITH, RK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) :1992-2007
[3]   PROCESS DESIGN USING TWO-DIMENSIONAL PROCESS AND DEVICE SIMULATORS [J].
CHIN, D ;
KUMP, MR ;
LEE, HG ;
DUTTON, RW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) :336-340
[4]  
ELMAN HC, 1981, RES REP, V203
[5]  
Gosele U., 1983, Defects in Semiconductors II, Symposium Proceedings, P45
[6]   MEASUREMENT OF SILICON INTERSTITIAL DIFFUSIVITY [J].
GRIFFIN, PB ;
FAHEY, PM ;
PLUMMER, JD ;
DUTTON, RW .
APPLIED PHYSICS LETTERS, 1985, 47 (03) :319-321
[7]  
GRIFFIN PB, 1986, MAT RES SOC S P, V71
[9]   INTERSTITIAL AND VACANCY CONCENTRATIONS IN THE PRESENCE OF INTERSTITIAL INJECTION [J].
HU, SM .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (04) :1069-1075