KINETICS OF INTERSTITIAL SUPERSATURATION AND ENHANCED DIFFUSION IN SHORT-TIME LOW-TEMPERATURE OXIDATION OF SILICON

被引：26

作者：

HU, SM

机构：

来源：

关键词：

D O I：

10.1063/1.335353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4527 / 4532

页数：6

共 20 条

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[2]

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[4] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

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[6] KINETICS OF THERMAL-OXIDATION OF SILICON IN O2-HCL MIXTURES [J].

HESS, DW ;

DEAL, BE .

[7]

Hu S. M., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P333

HU, SM .

HU, SM .

HU, SM .