PRESSURE-DEPENDENT STUDIES OF THE DX CENTER IN SI-DOPED AND SN-DOPED N+GAAS

被引：6

作者：

PORTAL, JC

MAUDE, DK

FOSTER, TJ

EAVES, L

DMOWSKI, L

NATHAN, M

HEIBLUM, M

HARRIS, JJ

BEALL, RB

SIMMONDS, PE

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

[3] CNRS,SNCI,F-38042 GRENOBLE,FRANCE

[4] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1988年 / 4卷 / 01期

关键词：

D O I：

10.1016/0749-6036(88)90263-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：33 / 38

页数：6

共 20 条

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