SPIN DEPENDENT RECOMBINATION AT THE SILICON SILICON DIOXIDE INTERFACE

被引：48

作者：

LENAHAN, PM

JUPINA, MA

机构：

[1] Pennsylvania State University, University Park

来源：

COLLOIDS AND SURFACES | 1990年 / 45卷

关键词：

D O I：

10.1016/0166-6622(90)80023-W

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We demonstrate that spin dependent recombination (SDR) has the sensitivity to explore interface and near interface defects in metal/oxide/silicon field effect transistors (MOSFETs) in integrated circuits. We also show that the SDR response of Pb centers is at least qualitatively consistent with the standard Shockley-Read-Hall recombination model. We also show that SDR measurements in the MOS system may provide a critical evaluation of several models which have been proposed to explain the SDR effect. © 1990.

引用

页码：191 / 211

页数：21

共 49 条

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