SPIN DEPENDENT RECOMBINATION AT THE SILICON SILICON DIOXIDE INTERFACE

We demonstrate that spin dependent recombination (SDR) has the sensitivity to explore interface and near interface defects in metal/oxide/silicon field effect transistors (MOSFETs) in integrated circuits. We also show that the SDR response of Pb centers is at least qualitatively consistent with the standard Shockley-Read-Hall recombination model. We also show that SDR measurements in the MOS system may provide a critical evaluation of several models which have been proposed to explain the SDR effect. © 1990.