IONIZING-RADIATION EFFECTS IN MOS CAPACITORS WITH VERY THIN GATE OXIDES

[1] AITKEN JM, 1976, IEEE T NUCL SCI, V23, P1526, DOI 10.1109/TNS.1976.4328533

[2] HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 614 - &

[3] PROCESS TECHNOLOGY FOR RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (04) : 459 - 465

[4] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[5] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906

[6] GWYEN CW, 1976, OXIDES OXIDE FILMS, V4, pCH2

[7] OXIDE THICKNESS DEPENDENCE OF HIGH-ENERGY ELECTRON-INDUCED, VUV-INDUCED, AND CORONA-INDUCED CHARGE IN MOS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 377 - 379

[8] MOS HARDNESS CHARACTERIZATION AND ITS DEPENDENCE UPON SOME PROCESS AND MEASUREMENT VARIABLES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1569 - 1572

[9] HUGHES GW, 1979, SOLID STATE TECH JUL, P70

[10] COMPARISON OF INTERFACE-STATE GENERATION BY 25-KEV ELECTRON-BEAM IRRADIATION IN P-TYPE AND N-TYPE MOS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 61 - 63

[1] AITKEN JM, 1976, IEEE T NUCL SCI, V23, P1526, DOI 10.1109/TNS.1976.4328533

[2] HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 614 - &

[3] PROCESS TECHNOLOGY FOR RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (04) : 459 - 465

[4] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[5] LOCATION OF POSITIVE CHARGES IN SIO2-FILMS ON SI GENERATED BY VUV PHOTONS, X-RAYS, AND HIGH-FIELD STRESSING [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 898 - 906

[6] GWYEN CW, 1976, OXIDES OXIDE FILMS, V4, pCH2

[7] OXIDE THICKNESS DEPENDENCE OF HIGH-ENERGY ELECTRON-INDUCED, VUV-INDUCED, AND CORONA-INDUCED CHARGE IN MOS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 377 - 379

[8] MOS HARDNESS CHARACTERIZATION AND ITS DEPENDENCE UPON SOME PROCESS AND MEASUREMENT VARIABLES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1569 - 1572

[9] HUGHES GW, 1979, SOLID STATE TECH JUL, P70

[10] COMPARISON OF INTERFACE-STATE GENERATION BY 25-KEV ELECTRON-BEAM IRRADIATION IN P-TYPE AND N-TYPE MOS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 61 - 63