BILAYER TAPER ETCHING OF FIELD OXIDES AND PASSIVATION LAYERS

被引：7

作者：

WHITE, LK

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 12期

关键词：

D O I：

10.1149/1.2129573

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2687 / 2693

页数：7

共 12 条

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[9] TAPERED WINDOWS IN SIO2 - EFFECT OF NH F-HF DILUTION AND ETCHING TEMPERATURE [J].

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[10] ENHANCED ETCHING OF ION-IMPLANTED SILICON-NITRIDE IN BUFFERED HYDROFLUORIC-ACID [J].

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