DIFFUSION LENGTH STUDIES IN SILICON BY THE SURFACE PHOTOVOLTAGE METHOD

被引：21

作者：

SARITAS, M ^{[1
]}

MCKELL, HD ^{[1
]}

机构：

[1] UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECT ENGN & ELECTR, MANCHESTER M60 1QD, LANCS, ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 05期

关键词：

D O I：

10.1016/0038-1101(88)90036-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：835 / 842

页数：8

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